BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 58

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

` Reduces component count and considerably simplifies radar
` P1 dB output power 200 W
` Efficiency > 40%
` Industry standard footprint
` 50 Ω in/out matched for entire bandwidth
` Lightweight heat sink included
` The advantages of LDMOS in comparison with Bipolar
60
Features:
system design
For a complete list of products see the respective small
signal and power microwave pages
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Very consistent performance – no tuning required
- Improved thermal characteristics, no thermal runaway
- Non-toxic packaging and ROHS compliance
NXP Semiconductors RF Manual 14
th
edition
Microwave applications and bands of operation
System
VHF and UHF
L-Band
S-Band
X-band
Commercial Avionics
Military Avionics
DME (Distance Measuring Equipment)
Transponders
Mode A / Mode S / Mode C / TCAS
IFF Transponders (Identification, Friend or Foe)
TACAN (Tactical Air Navigation)
JTIDS / MIDS
(Joint Tactical Information Distribution System)
Marine radar
8000 - 12000 MHz
1200 - 1400 MHz
2700 - 3500 MHz
1030 - 1090 MHz
1030 - 1090 MHz
9300 - 9500 MHz
978 - 1215 MHz
960 - 1215 MHz
960 - 1215 MHz
Frequency
<1 GHz