BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 66

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.3
3.3.1 Wideband transistors
Why choose NXP Semiconductors’ wideband transistors
` Broad portfolio (1
` Short leadtimes
` Smallest packages
` Volume delivery
Wideband transistors line-up per frequency
68
NEW : RF wideband transistor selection guide on www.nxp.com/rftransistors
(GHz)
f
T
100
NXP Semiconductors RF Manual 14
10
Easy-to-use parametric filters help you to choose the right RF wideband
transistor for your design.
1
0.1
RF Bipolar transistors
PIN
1
2
3
4
1
2
3
4
1
2
3
4
0.2
st
- 7
th
0.5
Type/XR (see Fig.2)
generation)
Type/X (see Fig.1)
Type (see Fig.1)
1
DECRIPTION
(18)
(25)
(1)
collector
collector
collector
emitter
emitter
emitter
emitter
emitter
emitter
(30)
th
base
base
base
edition
2
(7)
(4)
(8)
(19)
(26)
5
(33)
(34)
10
(9)
(38)
(14)
(20)
(31)
(3)
(27)
20
(35)
(10)
(15)
(21)
4
1
50
(39)
Wideband transistors
The f
characteristics as a function of collector current (I
generations of RF wideband transistors. A group of transistors
having the same collector current (I
frequencies (f
products in the table, detailing their RF characteristics.
(29)
(16)
(36)
(22)
T
100
-I
3
2
C
(11)
Figure 1
curve represents Transition Frequency (f
(40)
(23)
200
(37)
(32)
(12)
T
2 nd generation
1 st generation
3 rd generation
) represents a curve. The curve number matches
7 th generation
6 th generation
5 th generation
4 th generation
I
C
(mA)
3
2
500
(41)
bra510
1
4
1000
Figure 2
C
) & similar transition
T
C
)
) for the six