BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 75

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-channel, dual-gate MOSFETs
Bold = Highly recommended product
Bold Red
(1)
(2)
(3)
(4)
(5)
(7)
(8)
N-channel, dual gate MOSFETs for Set-Top-Boxes
(1)
(2)
(3)
Bold Red
Partly internal bias
Type
BF1100
BF1100R
BF1100WR
BF1101
BF1101R
BF1101WR
BF1102(R)
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
BF1203
BF1204
BF1205C
BF1205
BF1206
BF1206F
BF1207
BF1208
BF1208D
BF1210
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF1214
BF1218
BF1215
BF1216
BF1217
Two low noise gain amplifiers in one package
Internal switching function
Transistor A: fully internal bias, transistor B: partly internal bias
Asymmetrcal
V
I
V
Depletion FET plus diode in one package
@200 MHz
C
D
GS(th)
SG
OSS
Type
(11)
(10)
(11)(12)(13)
(11)
(11)(12)(13)
(11)(13)(14)
(11)(12)
(10)
(1)
(11/12/13)
(1)(2)(3)
= New, highly recommended product
= New, highly recommended product
(11)
(11)(12)(13)
(10)
(11)(12)(13)
Package
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT363
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT363
SOT666
SOT666
SOT363
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
SOT363
SOT363
Package
SOT363
SOT363
SOT343
max
V
(V)
14
14
14
10
10
10
10
10
10
10
10
10
10
max
7
7
7
7
6
6
7
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
V
(V)
DS
6
6
6
6
6
DS
(mA)
max
30
30
30
30
30
30
30
30
30
40
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
I
D
1)
1)
1)
(mA)
max
30
30
30
30
30
I
D
min
14
14
14
14
10
14
14
10
12
11
11
11
11
13
11
11
11
13
8
8
8
8
8
8
8
8
8
8
8
9
8
8
9
3
3
9
9
9
8
8
8
(mA)
I
(mA)
max
DSX
19.5
19.5
I
23
23
23
DSX
max
6.5
6.5
20
23
23
20
23
20
13
13
13
16
16
16
19
19
19
16
16
16
19
16
16
24
17
16
16
17
19
24
17
24
24
17
19
19
19
16
16
16
24
min
(V)
0.3
0.3
0.3
0.3
0.3
min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
(9)
(10)
(11)
(12)
(13)
(14)
V
V
C
Two equal dual gate MOSFETs in one package
Two low noise gain amplifiers in one package
Transistor A: fully internal bias, transistor B: partly internal bias
Internal switching function
Transistor A: partly internal bias, transistor B: fully internal bias
(V)
(th)gs
(th)gs
ig
max
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
1
1
max
1
1
1
1
1
1
1
1
1
1
(6)
(6)
(6)
1
1
1
1
1
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
min
24
24
24
25
25
25
36
23
23
23
25
25
25
23
25
25
26
28
26
26
33
29
17
17
25
26
26
28
26
25
26
28
25
25
25
28
28
28
25
26
25
(mS)
|Yfs|
CHARACTERISTICS
typ
27
27
27
27
27
|Yfs|
(mS)
CHARACTERISTICS
max
33
33
33
35
35
35
40
40
40
35
40
40
43
40
40
48
44
32
32
40
43
40
43
40
40
40
43
43
43
35
40
41
41
41
41
41
41
-
-
-
-
(pF)
typ
2.5
2.5
2.5
2.5
2.5
C
is
2.8
(pF)
typ
2.2
2.2
2.2
2.2
2.2
2.2
2.6
2.6
2.6
1.7
1.7
1.7
2.6
1.7
1.7
2.2
1.8
2.0
2.4
1.7
2.4
1.7
2.2
1.8
2.2
2.2
2.2
C
2.1
2.1
2.1
2.1
2.1
1.7
1.7
1.7
2.1
2.1
2
2
2
is
(9)
(pF)
typ
C
0.8
0.8
0.8
0.8
0.8
NXP Semiconductors RF Manual 14
1.2
1.2
1.2
1.6
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
0.85
(pF)
0.75
typ
C
0.8
0.8
0.8
1.4
1.4
1.4
0.9
0.9
0.9
0.9
0.9
1.1
1.1
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
OS
os
(8)
(8)
(8)
(8)
F @ 800 MHz
F @ 800
MHz
(dB)
typ
1.9
1.9
1.9
1.9
1.9
(dB)
typ
1.7
1.7
1.7
1.9
1.9
1.9
1.1
1.1
1.1
1.9
1.1
1.1
1.4
1.4
1.2
1.4
1.6
1.4
1.1
1.0
1.4
1.4
1.4
1.4
1.1
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
1.4
1.1
1.4
2
2
2
2
X-Mod @ 40 dB
gain reduction
VHF
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
-
-
-
-
-
-
-
-
-
-
-
-
(dB)
typ
107
107
107
107
107
UHF
th
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
-
-
-
-
-
-
-
-
-
-
-
-
edition
77