BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 74

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.5.2 MOSFETs
Why choose NXP Semiconductors’ MOSFETs
` Reference designs for TV tuning
` Short leadtimes
` Broad portfolio
` Smallest packages
` 2-in-1 FETs for tuner applications
` Reliable volume supply
` Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Silicon RF Switches
Bold = Highly recommended product
Bold Red
N-channel, dual-gate MOSFETs
With external bias
Fully internal bias
Partly internal bias
76
Type
BSS83
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
Type
BF908
BF908R
BF908WR
BF991
BF992
BF994S
BF996S
BF998
BF998R
BF998WR
BF1105
BF1105R
BF1105WR
BF1109
BF1109R
BF1109WR
BF904A
BF904AR
BF904AWR
BF909A
BF909AR
BF909AWR
NEW : RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric
5)
= New, highly recommended product
5)
NXP Semiconductors RF Manual 14
filters help you to choose the right RF MOSFET for your design.
Package
SOT143
SOT143R
SOT343R
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
Package
SOT143
SOT143B
SOT143R
SOT343R
SOT143B
SOT343R
SOT143R
SOT343
SOT343
SOT23
max
V
(V)
12
12
12
20
20
20
20
12
12
12
11
11
11
max
7
7
7
7
7
7
7
7
7
V
(V)
DS
10
3
3
3
3
3
3
3
3
3
DS
(mA)
max
40
40
40
20
40
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
40
I
(mA)
max
D
50
10
10
10
10
10
10
10
10
10
I
D
min
th
12
12
12
3
3
3
4
4
4
2
2
2
8
8
8
8
8
8
8
8
8
-
edition
min
(mA)
-
-
-
-
-
-
-
-
-
-
I
DSX
(mA)
max
I
DSS
27
27
27
25
20
20
18
18
18
16
16
16
16
16
16
13
13
13
20
20
20
-
100
100
100
max
100
100
100
100
100
100
-
(3)
(3)
(3)
min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
-
-
-
-
-
-
-
-
-
-
V
0.1
min
(V)
(th)gs
-
-
-
-
-
-
-
-
-
(2)
max
1.2
1.2
1.2
1.2
1.2
1.2
V
-2.5
-2.5
-2.5
-2.0
-2.0
-2.5
-1.3
1
1
1
1
1
1
(V)
-2
-2
-2
(p)GS
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
(6)
max
7(4)
7(4)
7(4)
7(4)
7(4)
7(4)
2
7
7
7
(1)
(4)
(4)
(4)
min
36
36
36
20
36
36
36
10
15
15
21
21
22
25
25
25
24
24
24
22
22
22
R
|Yfs|
(mS)
max
(Ω)
CHARACTERISTICS
DSON
45
20
20
20
20
20
22
22
22
22
max
50
50
50
30
30
30
50
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
min
-
-
-
-
-
-
-
-
-
typ.0.6
2.2
2.2
2.2
2.2
2.2
2.2
CHARACTERISTICS
(pF)
(pF)
typ
2.5
2.3
2.2
2.2
2.2
3.6
3.6
3.6
C
3.1
3.1
3.1
2.1
2.1
2.1
2.1
C
4
is
rs
(9)
(9)
(9)
(9)
(9)
(9)
max
-
-
-
-
-
-
-
-
-
1.05
1.05
1.05
1.2
1.2
1.2
1.3
1.3
1.3
(pF)
typ
C
0.8
1.3
1.3
1.3
2.3
2.3
2.3
1.7
1.7
1.7
1.1
2
1
os
(8)
(8)
(8)
(8)
(8)
(8)
typ
-
-
-
-
-
-
-
-
-
-
F @ 800 MHz
(ns)
t
on
1.2
max
(dB)
typ
1.5
1.5
1.5
1
1.8
1.7
1.7
1.7
1.5
1.5
1.5
1
1
1
1
2
2
2
2
2
2
1
-
-
-
-
-
-
-
-
-
(7)
(7)
typ
-
-
-
-
-
-
-
-
-
-
VHF
(ns)
t
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
off
-
max
5
-
-
-
-
-
-
-
-
-
UHF
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
-
-
|S
max
(dB)
21(on)
2.5
3
3
3
3
3
3
3
3
-
|
(1)
(6)
(2)
(7)
(3)
(8)
(4)
(9)
(5)
2
Asymmetrical
V
V
@ 200 MHz
I
C
V
C
Depletion FET
plus diode in one
package
D
GS
GS(th)
SG
|S
OSS
ig
(th)
(dB)
min
21(off)
30
30
30
30
30
30
30
30
30
-
|
2
MODE
depl.
depl.
depl.
depl
depl
depl
depl
depl
depl
enh.