BLF7G22LS-160,112 NXP Semiconductors, BLF7G22LS-160,112 Datasheet - Page 49

• Manufacturer Part Number: BLF7G22LS-160,112
• Description: TRANS LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-160,112

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2.7.1 NXP GaAs HFC CATV solutions CGY888C, CGD942C and CGD944C
Complete GaAs amplifier solutions for Chinese HFC networks
These high-performance GaAs solutions, specially designed for the Chinese SARFT HFC standard,
provide complete functionality in a format that reduces chip-count and lowers overall cost.
Products
` 870-MHz push-pull amplifier: CGY888C
` 870-MHz power doublers: CGD942C (23-dB gain),
Features
` GaAs HFET process for best performance and
` Excellent linearity, stability, and reliability
` High power gain
` Extremely low noise
` Excellent return-loss properties
Benefits
` Fully compliant with Chinese SARFT HFC networks standard
` Transparent cap confirms product authenticity
` Rugged construction
` Unconditionally stable
` Thermally optimized design
Applications
` Hybrid Fiber Coax (HFC) applications
` Line extenders
` Trunk amplifiers
` Fiber deep-optical-node (N+0/1/2)
To support Chinese HFC CATV infrastructure applications
as a single-source supplier, NXP offers the C-family,
a complete line of dedicated RF amplifier modules that
deliver the very high level of performance required for
next-generation HFC TV networks.
The family includes the 870-MHz push-pull amplifier
CGY888C, a GaAs upgrade of NXP’s industry-leading
BGY888 and BGY835C products, and two 870-MHz power
doublers: the CGD942C, which has a typical gain of 23 dB,
and the CGD944C, with a typical gain of 25 dB.
The modules are flexible enough to connect rural
communities as part of China’s ‘Connect Every Village’
project, and powerful enough to upgrade major cities
from analog to high-end digital services.
CGD944C (25-dB gain)
lowest chip-count
The modules have been tested under Chinese raster conditions
and fully comply with the Chinese SRAFT standard. They also
cover most HFC applications in the range of 550 to 870 MHz
and are compatible with previous generations of NXP HFC
solutions, so they can be used to upgrade existing networks to
a higher level of performance.
Produced in NXP’s advanced GaAs HFET die process, the
modules deliver excellent linearity with extremely low noise,
and work seamlessly together. The GaAs process improves
performance and, by reducing chip count, saves overall cost.
It offers stronger signal strength than Si, so there are fewer
amplifiers required, and it provides superior ESD protection
compared to GaAs pHEMT processes, so there’s no need for
external TVS components. The CGY888C is well suited for
use in the last stage of an HFC network, which is known as
a terminating amplifier or a user amplifier since it is close to
subscribers.
The CGD942C and the CGD944C offer higher output power
and better CTB and CSO than other power doublers, so they
are ideal for use in HFC networks that have optical nodes with
multiple out-ports. The modules enable each port to cover at
least 125 subscribers directly.
All the C-family modules are delivered with transparent
caps that make it easy to distinguish them from
counterfeit products.
Unmatched new ESD protection levels:
All new standard NXP CATV SOT115 hybrids, power doublers
or push pulls, released in 2009 and onwards will have a build-in
extra protection on top of the existing one for very high level
ESD surges. Those surge levels will leave our devices without
any damage or destruction. Human body or biased ESD levels
will increase respectively to 2000 V and 1500 V which is making
now NXP CATV devices the most ESD robust product on the
market today.
NXP Semiconductors RF Manual 14
th
edition
51