MT41J256M8HX-15E IT:D Micron Technology Inc, MT41J256M8HX-15E IT:D Datasheet - Page 160

• Manufacturer Part Number: MT41J256M8HX-15E IT:D
• Description: MICMT41J256M8HX-15E_IT:D 2GB DDR3 SDRAM
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M8HX-15E IT:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: -40C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Figure 74: READ to PRECHARGE (BC4)
DQS, DQS#
Figure 75: READ to PRECHARGE (AL = 5, CL = 6)
DQS, DQS#
Figure 76: READ with Auto Precharge (AL = 4, CL = 6)
DQS, DQS#
Command
Command
Command
Address
Address
Address
CK#
CK#
CK#
CK
DQ
DQ
CK
DQ
CK
Bank a,
READ
Bank a,
Bank a,
Col n
READ
Col n
READ
T0
Col n
T0
T0
NOP
T1
NOP
NOP
T1
T1
NOP
T2
AL = 4
t RAS
NOP
NOP
T2
T2
t RTP
AL = 5
NOP
T3
NOP
NOP
T3
T3
NOP
T4
NOP
NOP
T4
T4
t RAS
Bank a,
(or all)
PRE
T5
NOP
NOP
T5
T5
NOP
T6
t RTP (MIN)
NOP
NOP
T6
T6
t RAS (MIN)
NOP
T7
CL = 6
t RTP
NOP
NOP
T7
T7
NOP
T8
DO
n
CL = 6
n + 1
DO
NOP
NOP
NOP
t RP
T8
T8
T9
n + 2
DO
n + 3
DO
NOP
T10
Bank a,
(or all)
PRE
NOP
T9
T9
NOP
T11
NOP
T10
NOP
T10
DO
n
NOP
T12
n + 1
DO
NOP
NOP
T11
T11
n + 2
DO
DO
n
Bank a,
Row b
T13
ACT
n + 3
n + 1
DO
DO
Indicates A Break in
Time Scale
NOP
t RP
NOP
T12
T12
n + 2
DO
NOP
T14
n + 3
DO
NOP
NOP
T13
T13
NOP
T15
Transitioning Data
Transitioning Data
Transitioning Data
NOP
NOP
T14
t RP
NOP
T16
Bank a,
Bank a,
Row b
Row b
T15
ACT
ACT
Don’t Care
Ta0
Don’t Care
NOP
Don’t Care
T17