MT41J256M8HX-15E IT:D Micron Technology Inc, MT41J256M8HX-15E IT:D Datasheet - Page 207

• Manufacturer Part Number: MT41J256M8HX-15E IT:D
• Description: MICMT41J256M8HX-15E_IT:D 2GB DDR3 SDRAM
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M8HX-15E IT:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: -40C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
If the time in the precharge power down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods will overlap.
When overlap occurs, the response of the DRAM’s R
be synchronous or asynchronous from the start of the power-down entry transition pe-
riod to the end of the power-down exit transition period even if the entry period ends
later than the exit period.
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the re-
sponse of the DRAM’s R
asynchronous from the start of power-down exit transition period to the end of the power-
down entry transition period.
TT
to a change in the ODT state may be synchronous or
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR3 SDRAM
TT
to a change in the ODT state may
© 2006 Micron Technology, Inc. All rights reserved.