PIC18F2510-I/ML Microchip Technology Inc., PIC18F2510-I/ML Datasheet - Page 74
PIC18F2510-I/ML
Manufacturer Part Number
PIC18F2510-I/ML
Description
Microcontroller; 32 KB Flash; 1024 RAM; 0 EEPROM; 21 I/O; 28-Pin-QFN
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC18F2510-IML.pdf
(359 pages)
Specifications of PIC18F2510-I/ML
A/d Inputs
10-Channel, 10-Bit
Comparators
2
Cpu Speed
10 MIPS
Eeprom Memory
0 Bytes
Input Output
21
Interface
I2C/SPI/USART
Memory Type
Flash
Number Of Bits
8
Package Type
28-pin QFN
Programmable Memory
32K Bytes
Ram Size
1.5K Bytes
Speed
40 MHz
Timers
1-8-bit, 3-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F2510-I/ML
Manufacturer:
MICORCHIP
Quantity:
662
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PIC18F45J10 FAMILY
6.4
The minimum erase block is 1024 bytes. Only through
the use of an external programmer, or through ICSP
control, can larger blocks of program memory be bulk
erased. Word erase in the Flash array is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 1024 bytes of program
memory is erased. The Most Significant 7 bits of the
TBLPTR<21:10> point to the block being erased.
TBLPTR<9:0> are ignored.
The EECON1 register commands the erase operation.
The WREN bit must be set to enable write operations.
The FREE bit is set to select an erase operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 6-2:
DS39682B-page 72
Required
Sequence
Erasing Flash Program Memory
ERASE_ROW
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
Preliminary
6.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
8.
; load TBLPTR with the base
; address of the memory block
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
Load Table Pointer register with address of row
being erased.
Set the EECON1 register for the erase operation:
• set WREN bit to enable writes;
• set FREE bit to enable the erase.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the row erase
cycle.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
Re-enable interrupts.
FLASH PROGRAM MEMORY
ERASE SEQUENCE
© 2006 Microchip Technology Inc.
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