AT32UC3C2256C Atmel Corporation, AT32UC3C2256C Datasheet - Page 1282

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AT32UC3C2256C

Manufacturer Part Number
AT32UC3C2256C
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of AT32UC3C2256C

Flash (kbytes)
256 Kbytes
Pin Count
64
Max. Operating Frequency
66 MHz
Cpu
32-bit AVR
Hardware Qtouch Acquisition
No
Max I/o Pins
45
Ext Interrupts
64
Usb Transceiver
1
Quadrature Decoder Channels
1
Usb Speed
Full Speed
Usb Interface
Device + OTG
Spi
5
Twi (i2c)
2
Uart
4
Can
2
Lin
4
Ssc
1
Ethernet
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
11
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
2
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
68
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.0 to 3.6 or 4.5 to 5.5
Operating Voltage (vcc)
3.0 to 3.6 or 4.5 to 5.5
Fpu
Yes
Mpu / Mmu
Yes / No
Timers
3
Output Compare Channels
13
Input Capture Channels
6
Pwm Channels
14
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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Table 40-58. SDRAM Signal
Note:
32117C–AVR-08/11
Symbol
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
SDRAMC
1. These values are based on simulation and characterization of other AVR microcontrollers manufactured in the same pro-
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
23
24
25
26
cess technology. These values are not covered by test limits in production.
Parameter
SDCKE high before SDCK rising edge
SDCKE low after SDCK rising edge
SDCKE low before SDCK rising edge
SDCKE high after SDCK rising edge
SDCS low before SDCK rising edge
SDCS high after SDCK rising edge
RAS low before SDCK rising edge
RAS high after SDCK rising edge
SDA10 change before SDCK rising edge
SDA10 change after SDCK rising edge
Address change before SDCK rising edge
Address change after SDCK rising edge
Bank change before SDCK rising edge
Bank change after SDCK rising edge
CAS low before SDCK rising edge
CAS high after SDCK rising edge
DQM change before SDCK rising edge
DQM change after SDCK rising edge
D0-D15 in setup before SDCK rising edge
D0-D15 in hold after SDCK rising edge
SDWE low before SDCK rising edge
SDWE high after SDCK rising edge
D0-D15 Out valid before SDCK rising edge
D0-D15 Out valid after SDCK rising edge
(1)
drive strength of the pads set to
external capacitor = 40pF on
except 8 pF on SDCK pins
SDRAM pins
V
Conditions
the highest,
VDD
= 3.0V,
Min
AT32UC3C
8.4
6.4
5.6
5.6
7.3
6.8
8.3
6.1
7.7
7.1
4.7
4.4
6.2
6.9
6.6
7.8
6.7
6.4
7.4
5.2
7
6
0
7
Units
ns
1282

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