MT28C3212P2 Micron Semiconductor Products, Inc., MT28C3212P2 Datasheet - Page 2

• Manufacturer Part Number: MT28C3212P2
• Description: 2 Meg X 16 Page Flash, 128K X 16 SRAM Combo Memory, 66-ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

GENERAL DESCRIPTION
bination Flash and SRAM memory devices provide a
compact, low-power solution for systems where PCB
real estate is at a premium. The dual-bank Flash is a
high-performance, high-density, nonvolatile memory
device with a revolutionary architecture that can sig-
nificantly improve system performance.
by configuring soft protection registers with dedicated
command sequences. For security purposes, dual 64-
bit chip protection registers are provided.
functions are fully automated by an on-chip write state
machine (WSM). The WSM simplifies these operations
and relieves the system processor of secondary tasks.
An on-chip status register, one for each bank, can be
used to monitor the WSM status to determine the
progress of a PROGRAM/ERASE command.
compatibility with existing EEPROM emulation soft-
ware packages.
source for the Flash device (F_V
power source for the SRAM device (S_V
1.65V–1.95V or 1.80V–2.20V for optimized power con-
sumption and improved noise immunity. The
MT28C3212P2FL and MT28C3212P2NFL devices sup-
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
The MT28C3212P2FL and MT28C3212P2NFL com-
This new architecture features:
• A two-memory-bank configuration supporting
• A high-performance bus interface providing a fast
• A conventional asynchronous bus interface.
The device also provides soft protection for blocks
The embedded WORD WRITE and BLOCK ERASE
The erase/program suspend functionality allows
The device takes advantage of a dedicated power
dual-bank burst operation;
page data transfer; and
PART NUMBER
MT28C3212P2FL-10 BET
MT28C3212P2FL-10 TET
MT28C3212P2FL-11 BET
MT28C3212P2FL-11 TET
MT28C3212P2NFL-11 TET
Cross Reference for Abbreviated Device Marks
CC
) and a dedicated
CC
), both at
MARKING
PRODUCT
FW443
FW442
FW444
FW433
FW445
Table 2
128K x 16 SRAM COMBO MEMORY
2
port two V
circuit voltage of 0.9V–2.2V (MT28C3212P2FL) or 0.0V–
2.2V (MT28C3212P2NFL). V
patibility voltage of 12V ±5%. The 12V ±5% V
ported for a maximum of 100 cycles and 10 cumulative
hours. See Table 1.
vices contain an asynchronous 2Mb SRAM organized
as 128K-words by 16 bits. These devices are fabricated
using an advanced CMOS process and high-speed/
ultra-low-power circuit technology.
vices are packaged in a 66-ball FBGA package with
0.80mm pitch.
DEVICE MARKING
part number is not printed on the top of each device.
Instead, an abbreviated device mark comprised of a
five-digit alphanumeric code is used. The abbreviated
device marks are cross referenced to Micron part num-
bers in Table 2.
MARKING
DEVICE
MT28C3212P2FL
MT28C3212P2NFL
SAMPLE
FX443
FX442
FX444
FX433
FX445
The MT28C3212P2FL and MT28C3212P2NFL de-
The MT28C3212P2FL and MT28C3212P2NFL de-
Due to the size of the package, Micron’s standard
Micron Technology, Inc., reserves the right to change products or specifications without notice.
PP
voltage ranges, V
2 MEG x 16 PAGE FLASH
SAMPLE MARKING
V
PP
MECHANICAL
Voltage Ranges
FY443
FY442
FY444
FY433
FY445
Table 1
PP
PP
2
0.9V–2.2V
0.0V–2.2V
1
is the production com-
and V
VOLTAGE RANGE
V
PP 1
PP
©2002, Micron Technology, Inc.
2
. V
11.4V–12.6V
11.4V–12.6V
PP
PP
1
V
2
is an in-
PP 2
is sup-