MT28C3212P2 Micron Semiconductor Products, Inc., MT28C3212P2 Datasheet - Page 33

• Manufacturer Part Number: MT28C3212P2
• Description: 2 Meg X 16 Page Flash, 128K X 16 SRAM Combo Memory, 66-ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

FLASH READ CYCLE TIMING REQUIREMENT
V
FLASH READ CYCLE TIMING REQUIREMENT
V
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
CC
CC
PARAMETER
Address to output delay
CE# LOW to output delay
Page address access
OE# LOW to output delay
F_RP# HIGH to output delay
F_RP# LOW pulse width
CE# or OE# HIGH to output High-Z
Output hold from address, CE# or OE# change
READ cycle time
PARAMETER
Address to output delay
CE# LOW to output delay
Page address access
OE# LOW to output delay
F_RP# HIGH to output delay
F_RP# LOW pulse width
CE# or OE# HIGH to output High-Z
Output hold from address, CE# or OE# change
READ cycle time
= 1.65V–1.95V
= 1.80V–2.20V
SYMBOL
SYMBOL
t
t
t
t
t
t
t
t
RWH
RWH
AOE
t
t
AOE
t
t
t
APA
t
APA
ACE
t
t
ACE
t
t
AA
OD
OH
AA
OD
OH
RP
RC
RP
RC
33
128K x 16 SRAM COMBO MEMORY
V
V
MIN
MIN
CC
125
CC
100
0
0
= 1.65V
= 1.80V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-10
-10
2 MEG x 16 PAGE FLASH
–
–
MAX
MAX
1.95V
2.20V
100
100
200
100
150
35
30
25
95
95
35
30
25
95
V
V
MIN
MIN
CC
CC
125
100
0
0
= 1.65V
= 1.80V
-11
-11
–
–
1.95V
2.20V
MAX
MAX
110
110
200
110
100
100
150
100
45
30
25
45
30
25
©2002, Micron Technology, Inc.
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns