MT28C3212P2 Micron Semiconductor Products, Inc., MT28C3212P2 Datasheet - Page 34

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MT28C3212P2

Manufacturer Part Number
MT28C3212P2
Description
2 Meg X 16 Page Flash, 128K X 16 SRAM Combo Memory, 66-ball Fbga
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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FLASH WRITE CYCLE TIMING REQUIREMENTS
FLASH ERASE AND PROGRAM CYCLE TIMING REQUIREMENTS
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
PARAMETER
Reset HIGH recovery to WE# going LOW
CE# setup to WE# going LOW
Write pulse width
Data setup to WE# going HIGH
Address setup to WE# going HIGH
CE# hold from WE# HIGH
Data hold from WE# HIGH
Address hold from WE# HIGH
Write pulse width HIGH
WP# setup to WE# going HIGH
V
Write recovery before READ
WP# hold from valid SRD
V
WE# HIGH to data valid
PARAMETER
4KW parameter block program time
32KW parameter block program time
Word program time
4KW parameter block erase time
32KW parameter block erase time
Program suspend latency
Erase suspend latency
PP
PP
setup to WE# going HIGH
hold from valid SRD
34
128K x 16 SRAM COMBO MEMORY
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2 MEG x 16 PAGE FLASH
SYMBOL
t
t
t
t
t
t
t
WPH
WOS
t
t
t
RHH
VPH
t
t
t
t
t
RHS
VPS
WP
WB
DH
AH
CH
RS
CS
DS
AS
V
V
CC
CC
MIN
150
200
200
TYP
0.1
0.8
1.5
50
50
50
30
50
= 1.65V
= 1.65V
0
0
0
9
0
0
8
1
5
5
1.80V–2.20V
1.80V–2.20V
-10/-11
-10/-11
1.95V or
1.95V or
t
AA+50
MAX
MAX
185
0.3
2.4
10
20
4
5
©2002, Micron Technology, Inc.
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
s
s
s
s

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