MT28C3212P2 Micron Semiconductor Products, Inc., MT28C3212P2 Datasheet - Page 35

• Manufacturer Part Number: MT28C3212P2
• Description: 2 Meg X 16 Page Flash, 128K X 16 SRAM Combo Memory, 66-ball Fbga
• Manufacturer: Micron Semiconductor Products, Inc.

WRITE TIMING PARAMETERS
NOTE: 1. The WRITE cycles for the WORD PROGRAMMING command are followed by a READ ARRAY DATA cycle.
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
SYMBOL
t
t
t
t
t
t
t
RS
CS
WP
DS
AS
CH
DH
DQ0–DQ15
A0–A20
WP#
WE#
RP#
OE#
CE#
V
PP
V
V
IPPLK
V
V
IPPH
V
V
V
V
V
V
V
V
V
V
V
V
V
OH
OL
IH
IH
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
TWO-CYCLE PROGRAMMING/ERASE OPERATION
V
CC
MIN
150
50
50
50
High-Z
= 1.65V–1.95V or
0
0
0
t
RS
1.80V–2.20V
-10/-11
VALID ADDRESS
t
CS
MAX
CMD
t
DH
UNITS
ns
ns
ns
ns
ns
ns
ns
t
WPH
t
WP
t
CH
35
128K x 16 SRAM COMBO MEMORY
VALID ADDRESS
t
t
RHS
VPS
t
AS
SYMBOL
t
t
t
t
t
t
t
VPS
AH
RHS
WOS
RHH
VPH
WB
DATA
CMD/
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
AH
t
DS
2 MEG x 16 PAGE FLASH
t
WOS
t
WB
VALID ADDRESS
UNDEFINED
V
CC
STATUS
t
t
200
200
RHH
VPPH
50
= 1.65V–1.95V or
9
0
0
MIN
1.80V–2.20V
-10/-11
©2002, Micron Technology, Inc.
t
AA+50
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns