s71ws256jc0 Meet Spansion Inc., s71ws256jc0 Datasheet - Page 139

• Manufacturer Part Number: s71ws256jc0
• Description: Stacked Multi-chip Product Mcp 128/64 Megabit 8m/4m X 16-bit Cmos 1.8 Volt-only, Simultaneous Read/write, Burst Mode Flash Memory With Cellularram
• Manufacturer: Meet Spansion Inc.

31 DC Characteristics
Notes:
1. Wireless Temperature (-25ºC < TC < +85ºC); Industrial Temperature (-40ºC < TC < +85ºC).
2. Input signals may overshoot to V
3. Input signals may undershoot to V
4. BCR[5:4] = 00b.
5. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add the current
6. ISB (MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. To achieve Low standby current, all inputs
138
Asynchronous Random Read
Initial Access, Burst Read
Asynchronous Page Read
Output Leakage Current
Continuous Burst Write
required to drive output capacitance expected in the actual system.
must be driven to either V
Continuous Burst Read
Input Leakage Current
Output High Voltage
Output Low Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
Standby Current
Supply Voltage
Description
Table 31.1 Electrical Characteristics and Operating Conditions
CC
Q or V
Chip Enabled, I
V
V
V
V
V
IN
IN
IN
IN
I
I
Chip Disabled
Chip Enabled,
Chip Enabled,
CC
IN
OE# = V
OL
CE# = V
OH
SS
SS
Conditions
= V
IOUT = 0
= V
IOUT = 0
= V
= V
Q + 1.0V for periods less than 2ns during transitions.
= 0 to V
= +0.2mA
.
= -0.2mA
- 1.0V for periods less than 2ns during transitions.
CC
CC
CC
CC
Q or 0V
Q or 0V
Q or 0V
Q or 0V
IH
CC
OUT
CC
or
Q
A d v a n c e
Q
= 0
CellularRAM Type 2
Operating Current
V
I
I
I
V
V
V
V
V
I
I
CC
CC
CC
CC
I
LO
SB
OH
CC
OL
LI
IH
IL
Q
1
1
2
Symbol
W: 1.8V
80 MHz
66 MHz
80 MHz
66 MHz
80 MHz
66 MHz
64 M
I n f o r m a t i o n
-70
-70
0.80 V
-0.20
1.70
1.70
Min
1.4
CC
Q
V
0.20 V
CC
1.95
3.30
Q + 0.2
Max
120
0.4
25
15
35
30
18
15
35
30
1
1
CC
CellRam_03_A0 March 9, 2005
Q
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
V
Notes
2
3
4
4
5
5
5
6