S29CD016G SPANSION, S29CD016G Datasheet - Page 16

• Manufacturer Part Number: S29CD016G
• Description: 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
• Manufacturer: SPANSION

16
Simultaneous Read/Write Operations With Zero Latency
Writing Commands/Command Sequences
The device is capable of reading data from one bank of memory while program-
ming or erasing in the other bank of memory. An erase operation may also be
suspended to read from or program to another location within the same bank (ex-
cept the sector being erased). Refer to the table in
page 67
Simultaneous read/write operations are valid for both the main Flash memory
array and the SecSi OTP sector. Simultaneous Read/Write is disabled during the
CFI and Password Program/Verify operations. PPB Program/Erase operations and
the Password Unlock operation permit reading data from the large (75%) bank
while reading the operation status of these commands from the small (25%)
bank.
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to V
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The
Suspend Command” on page 49
vice using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 12 on page 34
each sector occupies. A “sector address” consists of the address bits required to
uniquely select a sector. The
regarding erasing a sector or the entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
Bank 0
Bank 1
Bank
for read-while-program and read-while-erase current specifications.
IL
, and OE# to V
Table 2. Bank Assignment for Boot Bank
Bank 0
Bank 1
Bank 0
Bank 1
Bank
Bank
and
Ordering Option 00
Table 3. Ordering Option 00
Table 4. Ordering Option 01
IH
Table 13 on page 36
.
A d v a n c e
Small Bank
Big Bank
“Command Definitions” on page 43
Sector Devices
contains details on programming data to the de-
S29CD016G
A18:A17
A18:A17
I n f o r m a t i o n
01, 1X
0X, 10
00
11
indicate the address space that
“Sector Erase and Program
Ordering Option 01
“DC Characteristics” on
Small Bank
Big Bank
contain details
S29CD016_00_A4 November 5, 2004