S29CD016G SPANSION, S29CD016G Datasheet - Page 3

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S29CD016G

Manufacturer Part Number
S29CD016G
Description
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
Manufacturer
SPANSION
Datasheet

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A d v a n c e
I n f o r m a t i o n
status bits. After a program or erase cycle is completed, the device is ready to
read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low V
detector that automat-
CC
ically inhibits write operations during power transitions. The password and
software sector protection feature disables both program and erase opera-
tions in any combination of sectors of memory. This can be achieved in-system
at V
level.
CC
The Program/Erase Suspend/Erase Resume feature enables the user to put
erase on hold for any period of time to read data from, or program data to, any
sector that is not selected for erasure. True background erase can thus be
achieved.
The hardware RESET# pin terminates any operation in progress and resets the
internal state machine to reading array data.
The device offers two power-saving features. When addresses are stable for a
specified amount of time, the device enters the automatic sleep mode. The
system can also place the device into the standby mode. Power consumption is
greatly reduced in both these modes.
Spansion Flash technology combines years of Flash memory manufacturing ex-
perience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via
Fowler-Nordheim tunnelling. The data is programmed using hot electron
injection.
November 5, 2004 S29CD016_00_A4
S29CD016G
3

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