S29CD016G SPANSION, S29CD016G Datasheet - Page 85

• Manufacturer Part Number: S29CD016G
• Description: 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
• Manufacturer: SPANSION

Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 145°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
6. PPBs have a program/erase cycle endurance of 100 cycles.
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
November 5, 2004 S29CD016_00_A4
Parameter
Sector Erase Time
Chip Erase Time
Double Word Program Time
Accelerated Double Word Program Time
Accelerated Chip Program Time
Chip Program Time
(Note 3)
programming typicals assume checkerboard pattern.
command. See
Parameter
Symbol
C
C
C
OUT
IN2
IN
Table 19 on page 58
A
= 25°C, f = 1.0 MHz.
Parameter Description
Control Pin Capacitance
A d v a n c e
Output Capacitance
Table 30. PQFP and Fortified BGA Pin Capacitance
Input Capacitance
x32
Table 29. Erase and Programming Performance
and
Typ (Note 1)
CC
Table 20 on page 59
I n f o r m a t i o n
= 2.5 V, 1,000,000 cycles.
1.0
46
18
12
8
5
S29CD016G
Max (Note 2)
230
250
130
120
50
5
for further information on command definitions.
Test Setup
V
V
V
°
OUT
C, 2.5 V V
IN
IN
= 0
= 0
= 0
Unit
µs
µs
s
s
s
s
CC
, 100,000 cycles. Additionally,
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Typ
8.5
7.5
6
Comments
Max
7.5
12
9
Unit
pF
pF
pF
85