MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 29

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MT46V16M8TG-8L

Manufacturer Part Number
MT46V16M8TG-8L
Description
DOUBLE DATA RATE DDR SDRAM
Manufacturer
MICRON [Micron Technology]
Datasheet
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
t
DQSS (NOM)
COMMAND
ADDRESS
DQS
CK#
DM
DQ
CK
NOTE: 1. DI b, etc. = data-in for column b, etc.
WRITE
Bank,
Col b
T0
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
t
DQSS
Nonconsecutive WRITE to WRITE
NOP
T1
DI
b
T1n
Figure 17
NOP
T2
29
T2n
WRITE
Bank,
Col n
T3
DON’T CARE
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x4, x8, x16
T4
NOP
DI
n
TRANSITIONING DATA
T4n
DDR SDRAM
PRELIMINARY
T5
NOP
©2001, Micron Technology, Inc.
T5n

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