MT46V16M8TG-8L MICRON [Micron Technology], MT46V16M8TG-8L Datasheet - Page 48

• Manufacturer Part Number: MT46V16M8TG-8L
• Description: DOUBLE DATA RATE DDR SDRAM
• Manufacturer: MICRON [Micron Technology]

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 1–5, 14–17, 33; notes appear on pages 50–53) (0°C ≤ T
128Mb: x4, x8, x16 DDR SDRAM
128Mx4x8x16DDR_C.p65 – Rev. C; Pub. 4/01
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
DD
CL = 2.5
CL = 2
SYMBOL MIN
t
t
t
CK (2.5)
t
t
DQSCK
t
t
WPRES
t
t
t
t
t
t
DQSQ
t
t
t
CK (2)
DQSH
t
WPRE
WPST
t
DIPW
DQSL
DQSS
t
t
t
t
t
t
t
t
t
XSNR
XSRD
MRD
t
RPRE
RPST
REFC
t
t
WTR
t
DSH
t
t
QHS
REFI
VTD
t
t
t
t
t
t
t
RAS
RAP
RCD
RRD
t
DSS
t
t
RFC
t
QH
WR
DH
na
AC
CH
DS
HP
HZ
IH
IH
RC
CL
LZ
IS
IS
RP
F
F
S
S
48
t
CH,
-0.75
-0.45
-0.75
-0.75
0.45
1.75
0.35
0.35
0.75
0.25
200
7.5
7.5
0.5
0.5
0.2
0.2
.90
.90
0.9
0.4
0.4
15
40
65
75
20
20
15
15
t
75
1
1
0
1
QH -
0
t
HP -
t
CL
-75Z
A
t
t
120,000
DQSQ
QHS
≤ +70°C; V
+0.75
+0.55
+0.75
+0.75
140.6
MAX
0.55
1.25
0.75
15.6
t
0.5
1.1
0.6
0.6
13
13
RAS(MIN) - (burst length *
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
CH,
-0.75
-0.75
-0.75
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.25
t
200
7.5
0.5
0.5
0.2
0.2
.90
.90
0.9
0.4
0.4
10
15
40
65
75
20
20
15
15
QH -
75
1
1
0
1
0
t
HP -
DD
t
CL
-75
Q = +2.5V ±0.2V, V
t
DQSQ
t
120,000
QHS
MAX
+0.75
+0.75
+0.75
140.6
0.55
0.55
1.25
0.75
15.6
0.5
1.1
0.6
0.6
13
13
128Mb: x4, x8, x16
t
CH,
MIN
0.45
0.45
0.35
0.35
0.75
0.25
-0.8
-0.8
-0.8
t
0.6
0.6
0.2
0.2
1.1
1.1
1.1
1.1
0.9
0.4
0.4
200
t
10
16
40
CK/2)
70
80
20
20
15
15
80
QH -
8
2
0
1
0
t
t
HP-
CL
-8
t
t
QHS
120,000
DQSQ
DDR SDRAM
MAX
140.6
+0.8
0.55
0.55
+0.8
1.25
+0.8
15.6
0.6
1.1
0.6
0.6
13
13
1
DD
PRELIMINARY
= +2.5V ±0.2V)
©2001, Micron Technology, Inc.
UNITS NOTES
t
t
t
t
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
CK
ns
CK
CK
CK
CK
CK
CK
45, 52
45, 52
26, 31
26, 31
25, 26
18, 42
25, 26
20, 21
18, 43
30
30
31
34
14
14
14
14
50
42
19
25
23
23
35
46