SSTUM32868ET/G NXP [NXP Semiconductors], SSTUM32868ET/G Datasheet - Page 18

• Manufacturer Part Number: SSTUM32868ET/G
• Description: 1.8 V 28-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
10. Characteristics
Table 8.
Over recommended operating conditions, unless otherwise noted.
[1]
SSTUM32868_2
Product data sheet
Symbol
V
V
I
I
I
C
Z
I
DD
DDD
o
OH
OL
i
Instantaneous is defined as within < 2 ns following the output data transition edge.
Characteristics
Parameter
HIGH-level output voltage
LOW-level output voltage
input current
supply current
dynamic operating current
per MHz
input capacitance
output impedance
Conditions
I
I
all inputs; V
static standby; RESET = GND; V
I
static operating; RESET = V
V
V
clock only; RESET = V
V
at 50 % duty cycle. I
per each data input (1 : 1 mode);
RESET = V
CK and CK switching at 50 % duty cycle.
One data input switching at half clock
frequency, 50 % duty cycle. I
V
per each data input (1 : 2 mode);
RESET = V
CK and CK switching at 50 % duty cycle.
One data input switching at half clock
frequency, 50 % duty cycle. I
V
Dn, CSGEN, PAR_IN inputs;
V
DCSn; V
V
CK and CK; V
V
RESET; V
instantaneous
steady-state
OH
OL
O
DD
I
I
DD
DD
I
DD
DD
= 0 mA
= V
= V
= V
= 6 mA; V
= 6 mA; V
= 1.9 V; I
= 1.8 V
= 1.8 V
= 1.8 V
= 1.8 V
IH(AC)
IH(AC)
ref
ICR
Rev. 02 — 2 March 2007
I
250 mV; V
= V
DD
DD
I
or V
or V
= 0.9 V; V
= V
DD
O
; V
; V
ICR
1.8 V DDR2-800 configurable registered buffer with parity
DD
DD
= 0 mA;
IL(AC)
IL(AC)
DD
= 1.7 V
I
I
= 0.9 V; V
= V
= V
or GND; V
= 1.7 V
or GND; V
O
; CK and CK switching
DD
IH(AC)
IH(AC)
= 0 mA; V
ID
DD
= 1.8 V
= 600 mV;
;
or V
or V
ID
DD
DD
O
O
DD
= 600 mV;
;
= 0 mA;
= 0 mA;
IL(AC)
IL(AC)
= 1.8 V
DD
DD
= 1.9 V
= 1.8 V
= 1.9 V;
;
;
[1]
Min
1.2
-
-
-
-
-
-
-
2.5
2.5
2
3
-
-
SSTUM32868
Typ
-
-
-
-
-
16
19
19
-
-
-
-
7
53
© NXP B.V. 2007. All rights reserved.
Max
-
0.5
2
80
-
-
-
4
4
3
5
-
-
5
18 of 30
Unit
V
V
mA
mA
pF
pF
pF
pF
A
A
A
A