SSTUM32868ET/G NXP [NXP Semiconductors], SSTUM32868ET/G Datasheet - Page 28

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SSTUM32868ET/G

Manufacturer Part Number
SSTUM32868ET/G
Description
1.8 V 28-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
14. Abbreviations
15. Revision history
Table 15.
SSTUM32868_2
Product data sheet
Document ID
SSTUM32868_2
Modifications:
SSTUM32868_1
Revision history
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description” .
Table 14.
Acronym
CMOS
DDR2
DIMM
DRAM
LVCMOS
PRR
RDIMM
SSTL
Fig 24. Temperature profiles for large and small components
Release date
20070302
20060912
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 8
from “100 A” to “2 mA”
MSL: Moisture Sensitivity Level
temperature
Abbreviations
“Characteristics”, symbol I
Description
Complementary Metal Oxide Semiconductor
Double Data Rate 2
Dual In-line Memory Module
Dynamic Random Access Memory
Low Voltage Complementary Metal Oxide Semiconductor
Pulse Repetition Rate
Registered Dual In-line Memory Module
Stub Series Terminated Logic
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 2 March 2007
= minimum soldering temperature
1.8 V DDR2-800 configurable registered buffer with parity
maximum peak temperature
minimum peak temperature
= MSL limit, damage level
DD
: changed static standby condition’s maximum value
Change notice
-
SSTUM32868
temperature
Supersedes
SSTUM32868_1
-
peak
© NXP B.V. 2007. All rights reserved.
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