SSTUM32868ET/G NXP [NXP Semiconductors], SSTUM32868ET/G Datasheet - Page 20

• Manufacturer Part Number: SSTUM32868ET/G
• Description: 1.8 V 28-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
11. Test information
SSTUM32868_2
Product data sheet
11.1 Parameter measurement information for data output load circuit
V
All input pulses are supplied by generators having the following characteristics:
Pulse Repetition Rate (PRR)
unless otherwise specified.
The outputs are measured one at a time with one transition per measurement.
Fig 9. Load circuit, data output measurements
Fig 10. Voltage and current waveforms; inputs active and inactive times
Fig 11. Voltage waveforms; pulse duration
DD
= 1.8 V
(1) C
(1) I
CK inputs
V
V
V
DD
ID
IH
IL
L
includes probe and jig capacitance.
= V
tested with clock and data inputs held at V
= 600 mV.
= V
ref
0.1 V.
ref
+ 250 mV (AC voltage levels) for differential inputs. V
R L = 100
test point
test point
250 mV (AC voltage levels) for differential inputs. V
RESET
input
LVCMOS
50
Rev. 02 — 2 March 2007
I
DD
1.8 V DDR2-800 configurable registered buffer with parity
(1)
10 MHz; Z
0.5V
t
INACT
DD
V
10 %
ICR
CK
CK
DUT
0
= 50 ; input slew rate = 1 V/ns
OUT
t
W
DD
or GND, and I
delay = 350 ps
Z o = 50
0.5V
V
ICR
t
IL
IH
ACT
O
DD
= GND for LVCMOS inputs.
= 0 mA.
= V
C L = 30 pF (1)
SSTUM32868
002aaa373
V
0 V
DD
DD
V
002aaa372
ID
for LVCMOS inputs.
90 %
V
V
IH
IL
© NXP B.V. 2007. All rights reserved.
V
DD
R L = 1000
R L = 1000
002aab902
20 %,
20 of 30