HYB25D128160CE-5 QIMONDA [Qimonda AG], HYB25D128160CE-5 Datasheet - Page 25

• Manufacturer Part Number: HYB25D128160CE-5
• Description: 128-Mbit Double-Data-Rate SDRAM
• Manufacturer: QIMONDA [Qimonda AG]

1) Test conditions for typical values: VDD = 2.5 V ( DDR266, DDR333), VDD = 2.6 V (DDR400), TA = 25 °C, test conditions for maximum
2)
3) Input slew rate = 1 V/ns.
4) Enables on-chip refresh and address counters.
5) L: Low power version (available on request)
Rev. 1.6, 2007-02
03292006-U5AN-6TI1
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7
values: VDD = 2.7 V, TA = 10 °C
I
MHz for DDR400.
DD
specifications are tested after the device is properly initialized and measured at 133 MHz for DDR266, 166 MHz for DDR333, and 200
–5
DDR400B
70
75
80
95
4
30
20
13
38
43
85
100
90
100
140
1.4
—
210
210
Typ.
Max.
90
90
100
110
5
36
28
18
45
54
100
120
105
130
190
2.8
—
250
250
–6
DDR333
60
65
70
80
3.5
25
17
11
32
36
70
85
75
90
120
1.4
1.1
180
180
Typ.
Max.
75
75
85
95
4.5
30
24
15
38
45
85
100
90
110
160
2.8
1.1
215
215
–7
DDR266A
50
55
65
70
3
20
15
9
28
30
60
70
65
75
100
1.4
1.1
140
140
Typ.
25
Max.
65
65
75
85
4
24
21
13
36
40
70
85
75
90
140
2.8
1.1
170
170
mA
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
128-Mbit Double-Data-Rate SDRAM
Note
×4/×8
×16
×4/×8
×16
—
—
—
—
×4/×8
×16
×4/×8
×16
×4/×8
×16
—
Standard version
Low power version
×4/×8
×16
HYB25D128xxxC[C/E/F/T](L)
1)
2)3)
/ Test Condition
Internet Data Sheet
I
DD
4)
TABLE 21
5)
Specification