K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 10

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F2808U0C
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
3. Minimum 502 valid blocks are guaranteed for each contiguous 64Mb memory space.
AC TEST CONDITION
(K9F2808U0C-XCB0 :TA=0 to 70°C, K9F2808U0C-XIB0:TA=-40 to 85°C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
NOTE : Typical program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and temperature of
25
K9F2808U0C : Vcc=2.7V~3.6V unless otherwise noted)
cycles.
Valid Block Number
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (Vcc
Output Load (Vcc
Input/Output Capacitance
Input Capacitance
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
CLE
°
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
C .
H
H
X
X
X
X
X
L
L
L
L
L
device
2. WP should be biased to CMOS high or CMOS low for standby.
ALE
X
Parameter
H
H
X
X
X
X
L
L
L
L
L
(1)
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
Item
IL
Q
Q
:3.0V +/-10%)
:3.3V +/-10%)
or V
CE
X
X
X
X
H
L
L
L
L
L
L
L
(
T
Parameter
A
IH.
=25°C, V
WE
Parameter
H
H
X
X
X
X
X
CC
=3.3V, f=1.0MHz)
Symbol
Symbol
RE
N
C
H
H
H
H
H
H
H
X
X
X
X
C
I/O
VB
IN
Spare Array
Main Array
GND
0V
X
X
X
X
L
L
X
X
L
L
L
Test Condition
0V/V
V
V
WP
1004
X
X
H
H
H
X
H
H
IL
IN
X
X
L
Min
Symbol
CC
=0V
=0V
t
t
PROG
Nop
BERS
(2)
10
Data Input
Data Output
During Read(Busy)
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Read Mode
Write Mode
Min
-
-
-
-
Typ.
Min
-
-
-
Command Input
Address Input(3clock)
Command Input
Address Input(3clock)
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Typ
200
2
-
-
K9F2808U0C
Mode
0.4V to 2.4V
FLASH MEMORY
1024
Max
Max
1.5V
10
10
5ns
Max
500
.
2
3
3
Do not erase or program
Blocks
Unit
Unit
pF
pF
cycles
cycles
Unit
ms
µs