K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 20

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K9F2808Q0C-HCB0

Manufacturer Part Number
K9F2808Q0C-HCB0
Description
16M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K9F2808U0C
READ1 OPERATION
READ2 OPERATION
I/Ox
CLE
CE
WE
ALE
RE
R/B
CLE
CE
WE
ALE
RE
R/B
I/Ox
50h
Read
CMD
N Address
M Address
(INTERCEPTED BY CE)
(READ ONE PAGE)
Column
Address
A
Col. Add
0
~A
Col. Add
3
are Valid Address & A
Row Add1
Row Add1
Page(Row)
Address
Row Add2
Row Add2
4
t
t
~A
WB
WB
7
Busy
t
t
RR
are Don
R
t
AR
20
′t
CE must be held
care
low during tR
Dout N
t
R
Dout N+1
t
AR
t
RC
CE must be held
low during tR
t
RR
Dout N+2
Selected
Row
Dout
n+M
FLASH MEMORY
n = 512, m = 16
Dout N+3
n+M+1
t
t
Dout
CHZ
OH
n
Dout n+m
address M
Start
m

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