K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 9

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F2808U0C-XCB0
DC AND OPERATING CHARACTERISTICS
NOTE : V
K9F2808U0C
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Current
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Supply Voltage
Operating
Maximum DC voltage on input/output pins is V
Current
IL
can undershoot to -0.4V and V
Parameter
Parameter
Sequential Read
Program
Erase
Parameter
K9F2808U0C-XCB0
K9F2808U0C-XIB0
K9F2808U0C-XCB0
K9F2808U0C-XIB0
SS
IH
Symbol
V
can overshoot to V
V
V
CCQ
CC
SS
Symbol
I
OL
CC,
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
+0.3V which, during transitions, may overshoot to V
LO
OH
LI
IH*
IL*
OL
1
2
3
1
2
:
T
A
=0 to 70°C, K9F2808U0C-XIB0
tRC=50ns, CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
I
I
V
OUT
OH
OL
CC
IN
OUT
OL
=2.1mA
=0 to Vcc(max)
=-400µA
=0.4V
=0mA
+0.4V for durations of 20 ns or less.
=0 to Vcc(max)
Min
2.7
2.7
IH
CC
Symbol
0
V
(Recommended operating conditions otherwise noted.)
, WP=0V/V
V
T
T
-0.2, WP=0V/V
IN/OUT
V
Test Conditions
Ios
CCQ
BIAS
STG
CC
9
IL
-
-
-
CC
CC
Typ.
3.3
3.3
0
:
T
A
=-40 to 85°C)
CC
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
+2.0V for periods <20ns.
Rating
Min
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
5
FLASH MEMORY
Max
3.6
3.6
Typ
10
10
10
10
10
0
-
-
-
-
-
-
-
-
V
V
CCQ
CC
Max
±10
±10
0.8
0.4
20
20
20
50
1
-
-
+0.3
+0.3
Unit
V
V
V
Unit
mA
°C
°C
V
Unit
mA
mA
µA
V