K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 3

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

16M x 8 Bit NAND Flash Memory
PRODUCT LIST
FEATURES
• Voltage Supply : 2.7 ~ 3.6 V
• Organization
• Automatic Program and Erase
• Page Read Operation
GENERAL DESCRIPTION
Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell pro-
vides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs
on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out
at 50ns cycle time per word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar-
gining of data. Even the write-intensive systems can take advantage of the K9F2808U0C’s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F2808U0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
K9F2808U0C
- Memory Cell Array
- Data Register
- Page Program
- Block Erase :
- Page Size
- Random Access
- Serial Page Access : 50ns(Min.)
-(16M + 512K)bit x 8bit
- (512 + 16)bit x 8bit
-(512 + 16)Byte
- (16K + 512)Byte
- (512 + 16)Byte
K9F2808U0C-Y,P
K9F2808U0C-V,F
Part Number
: 10µs(Max.)
Vcc Range
2.7 ~ 3.6V
3
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• Reliable CMOS Floating-Gate Technology
• Command Register Operation
• Unique ID for Copyright Protection
• Package
- K9F2808U0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F2808U0C-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F2808U0C-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package
* K9F2808U0C-V/F(WSOPI ) is the same device as
• Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- Program/Erase Lockout During Power Transitions
- Endurance
- Data Retention : 10 Years
K9F2808U0C-Y/P(TSOP1) except package type.
Organization
X8
: 100K Program/Erase Cycles
FLASH MEMORY
PKG Type
WSOP1
TSOP1