K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 25

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Figure 9. Read2 Operation
Figure 8-1. Sequential Row Read1 Operation
K9F2808U0C
R/B
I/Ox
RE
CLE
CE
WE
ALE
R/B
I/Ox
Block
A
00h
01h
(GND input=L, 00h Command)
1st half array
4
~ A
50h
7
Data Field
Don’t care
Start Add.(3Cycle)
A
Start Add.(3Cycle)
A
0
0
~ A
2nd half array
~ A
7
3
& A
& A
9
Spare Field
9
~ A23
~ A23
1st
2nd
Nth
t
R
t
R
1st half array
Data Field
Data Output
(GND input=L, 01h Command)
Main array
1st
CE must be held
Data Field
low during tR
25
2nd half array
Spare Field
t
R
Spare Field
Data Output
(528 Byte)
1st
2nd
Nth
Data Output(Sequential)
2nd
Spare Field
1st half array
(GND input=H, 00h Command)
FLASH MEMORY
t
Data Field
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth