K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 16

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F2808U0C
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as seperate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
Figure 7. Read Operation with CE don’t-care.
CLE
CE
WE
ALE
CE
WE
I/Ox
R/B
WE
CLE
ALE
CE
RE
I/Ox
t
CS
00h
80h
Start Add.(3Cycle)
Start Add.(3Cycle)
t
WP
CE must be held
low during tR
t
CH
t
R
Data Input
16
I/O
CE
RE
0
~
15
CE don’t-care
CE don’t-care
t
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
10h