K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 31

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F2808U0C
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down and recovery time of minimum 10µs is required before internal circuit gets ready for any command
sequences as shown in Figure 15. The two step command sequence for program/erase provides additional software protection.
Figure 15. AC Waveforms for Power Transition
WP
WE
V
CC
3.3V device : ~ 2.5V
10µs
High
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FLASH MEMORY
3.3V device : ~ 2.5V
IL