K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 11

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F2808U0C
AC Timing Characteristics for Command / Address / Data Input
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
CE Access Time
RE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time
K9F2808U0C-
Y,P,V,F only
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
Parameter
(Read/Program/Erase)
Last RE High to Busy
(at sequential read)
CE High to Ready(in case of interception by
CE at read)
CE High Hold Time(at the last serial read)
Parameter
Symbol
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WP
WC
WH
CH
DH
CS
DS
11
(2)
Symbol
10
10
25
10
20
10
50
15
0
0
0
t
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
t
CLR
t
CEA
REA
RHZ
CHZ
REH
RST
t
CRY
CEH
t
WB
t
AR
RR
RP
RC
OH
RB
IR
R
K9F2808U0C
100
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
-
-
K9F2808U0C
FLASH MEMORY
-
-
-
-
-
-
-
-
-
-
-
50 +tr(R/B)
5/10/500
100
100
10
45
30
30
20
-
-
-
-
-
-
-
-
-
-
(1)
(3)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns