K9F2808Q0C-HCB0 SAMSUNG [Samsung semiconductor], K9F2808Q0C-HCB0 Datasheet - Page 30

• Manufacturer Part Number: K9F2808Q0C-HCB0
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F2808U0C
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 14). Its value can be
determined by the following guidance.
V
CC
GND
Rp value guidance
Rp(min, 3.3V part) =
Rp(max) is determined by maximum permissible limit of tr
Device
open drain output
R/B
where I
Rp
V
L
CC
200n
100n
300n
is the sum of the input currents of all devices tied to the R/B pin.
(Max.) - V
ibusy
Figure 14. Rp vs tr ,tf & Rp vs ibusy
I
OL
C
+ ΣI
L
OL
2.4
L
1K
100
3.6
(Max.)
@ Vcc = 3.3V, Ta = 25
Ready Vcc
Ibusy
tf
tr
30
200
1.2
2K
3.6
=
Rp(ohm)
tf
8mA + ΣI
V
300
0.8
3K
OL
3.6
3.2V
°C , C
VOL
: 0.4V, V
L
L
= 100pF
0.6
400
3.6
4K
OH
Busy
: 2.4V
2m
3m
1m
FLASH MEMORY
tr
VOH