MT29C4G48MAZAPAKD-5 E IT Micron, MT29C4G48MAZAPAKD-5 E IT Datasheet - Page 158

• Manufacturer Part Number: MT29C4G48MAZAPAKD-5 E IT
• Manufacturer: Micron

Figure 105: ACTIVE Command
READ
PDF: 09005aef83ba4387
168ball_nand_lpddr_j42p_j4z2_j4z3_omap.pdf – Rev. H 3/11
BA0, BA1
The READ command is used to initiate a burst read access to an active row. The values
on the BA0 and BA1 inputs select the bank; the address provided on inputs A[I:0] (where
I = the most significant column address bit for each configuration) selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row will remain open for subsequent
accesses.
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP
Bank
Row
Don’t Care
158
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Commands