MCIMX6Q4AVT10ACR Freescale Semiconductor, MCIMX6Q4AVT10ACR Datasheet - Page 25

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MCIMX6Q4AVT10ACR

Manufacturer Part Number
MCIMX6Q4AVT10ACR
Description
Processors - Application Specialized i.MX6Q
Manufacturer
Freescale Semiconductor
Type
Multimedia Applicationsr
Datasheet

Specifications of MCIMX6Q4AVT10ACR

Core
ARM Cortex A9
Processor Series
i.MX6
Data Bus Width
32 bit
Maximum Clock Frequency
1 GHz
Data Ram Size
256 KB
Operating Supply Voltage
1.05 V to 1.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
FCBGA-624
Interface Type
I2C, I2S, UART, USB
Memory Type
L1/L2 Cache, ROM, SRAM
Minimum Operating Temperature
- 40 C
Number Of Timers
2
1
4.1.6
Table 10
selected low power modes.
Freescale Semiconductor
Deep Sleep Mode
The typical values shown here are for information only and are not guaranteed. These values are average values measured
on a worst-case wafer at 25C.
STOP_OFF
SNVS Only
STOP_ON
STANDBY
(DSM)
Mode
WAIT
shows the current core consumption (not including I/O) of the i.MX 6Dual/6Quad processors in
Low Power Mode Supply Currents
i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors, Rev. 2
• ARM, SoC, and PU LDOs are set to 1.225 V
• HIGH LDO set to 2.5 V
• Clocks are gated
• DDR is in self refresh
• PLLs are active in bypass (24 MHz)
• Supply voltages remain ON
• ARM LDO set to 0.9 V
• SoC and PU LDOs set to 1.225 V
• HIGH LDO set to 2.5 V
• PLLs disabled
• DDR is in self refresh
• ARM LDO set to 0.9 V
• SoC LDO set to 1.225 V
• PU LDO is power gated
• HIGH LDO set to 2.5 V
• PLLs disabled
• DDR is in self refresh
• ARM and PU LDOs are power gated
• SoC LDO is in bypass
• HIGH LDO is set to 2.5 V
• PLLs are disabled
• Low voltage
• Well Bias ON
• Crystal oscillator is enabled
• ARM and PU LDOs are power gated
• SoC LDO is in bypass
• HIGH LDO is set to 2.5 V
• PLLs are disabled
• Low voltage
• Well Bias ON
• Crystal oscillator and bandgap are disabled
• VDD_SNVS_IN powered
• All other supplies off
• SRTC running
Table 10. Stop Mode Current and Power Consumption
Test Conditions
VDD_HIGH_IN (3.0 V)
VDD_HIGH_IN (3.0 V)
VDD_HIGH_IN (3.0 V)
VDD_HIGH_IN (3.0 V)
VDD_HIGH_IN (3.0 V)
VDD_SNVS_IN (2.8V)
VDD_ARM_IN (1.4 V)
VDD_SOC_IN (1.4 V)
VDD_ARM_IN (1.4 V)
VDD_SOC_IN (1.4 V)
VDD_ARM_IN (1.4 V)
VDD_SOC_IN (1.4 V)
VDD_ARM_IN (0.9 V)
VDD_SOC_IN (0.9 V)
VDD_ARM_IN (0.9 V)
VDD_SOC_IN (0.9 V)
Supply
Total
Total
Total
Total
Total
Total
Electrical Characteristics
Typical
13.5
115
3.7
7.5
3.7
7.5
3.7
0.1
3.7
0.1
0.5
3.4
23
52
22
52
41
13
22
41
6
2
1
Unit
mW
mW
mW
mW
mW
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
W
A
25

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