NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 16
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Signal descriptions
3.7
3.8
3.9
3.10
3.11
16/67
Write Enable (W)
The Write Enable input, W, controls writing to the command interface, input address and
data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 µs (min) is required before the
command interface is ready to accept a command. It is recommended to keep Write Enable
High during the recovery time.
Write Protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, V
program or erase operations.
It is recommended to keep the Write Protect pin Low, V
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R
controller is currently active. When Ready/Busy is Low, V
operation is in progress. When the operation completes Ready/Busy goes High, V
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Refer to the
calculate the value of the pull-up resistor.
During power-up and power-down a minimum recovery time of 10 µs is required before the
command interface is ready to accept a command. During this period the RB signal is Low,
V
V
V
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever V
Table 22
power-transitions.
Each device in a system should have V
widths should be sufficient to carry the required program and erase currents.
V
Ground, V
ground.
OL
DD
DD
SS
.
provides the power supply to the internal core of the memory device. It is the main
ground
supply voltage
and
SS,
Section 11.1: Ready/Busy signal electrical characteristics
Table
is the reference for the power supply. It must be connected to the system
23) to protect the device from any involuntary program/erase during
DD
decoupled with a 0.1 µF capacitor. The PCB track
IL
, the device does not accept any
IL
, during power-up and power-down.
OL
, a read, program or erase
DD
is below V
for details on how to
LKO
NAND01G-B2C
(see
OH
.