NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 33
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
NAND01G-B2C
6.8
Read electronic signature
The device contains a manufacturer code and device code. To read these codes three steps
are required:
1.
2.
3.
Table 12.
Table 13.
NAND01GW3B2C
NAND01GW4B2C
NAND01GR3B2C
NAND01GR4B2C
Part number
One bus write cycle to issue the Read Electronic Signature command (90h)
One bus write cycle to input the address (00h)
Four bus read cycles to sequentially output the data (as shown in
signature).
I/O1-I/O0
I/O3-I/O2
I/O5-I/O4
I/O6
I/O7
I/O
Electronic signature
Electronic signature byte 3
Number of simultaneously
between multiple devices
Interleaved programming
Manufacturer
byte/word 1
Internal chip number
programmed pages
Cache program
code
20h
Definition
Cell type
Device code
byte/word 2
A1h
B1h
C1h
F1h
Value
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0
1
0
1
(see
byte/word 3
Table
00h
13)
Table 12: Electronic
2x multilevel cell
Device operations
Single level cell
Not supported
Not supported
Description
Supported
Supported
(see
Reserved
Reserved
Reserved
byte/word 4
1
2
4
1
2
3
4
Table
1Dh
5Dh
15h
55h
14)
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