NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 66

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NAND01GW3B2CN6E

Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Datasheets

Specifications of NAND01GW3B2CN6E

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant

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Revision history
14
66/67
Revision history
Table 29.
23-Feb-2009
24-Jun-2008
16-Jan-2009
08-Jun-2009
29-Jan-2010
Date
Document revision history
Version
1
2
3
4
5
Initial release.
Modified
waveform, and
Ready/Busy
Modified
Table 16: Parameter page data
the cover page and in
Removed references to ECOPACK packages throughout the document.
Document status promoted from preliminary data to full datasheet.
Modified dimension A2 of the VFBGA63 package in
VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.80 mm pitch, package
mechanical
Added references to the VFBGA153 8 x 9 x 0.9 mm package
throughout the document. Removed temperature range 1 and added
temperature range 5 in
Section 8.5: Error correction
Figure 7: Read
data.
signal. Removed Figure 19: Error detection.
Figure 36: Resistor value versus waveform timings for
Section 1:
Table 28: Ordering information
operations,
Changes
structure. Added security features on
Description.
Table 12: Electronic signature
code,
Figure 34: Ready/Busy AC
Table 27:
NAND01G-B2C
scheme.
and

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