NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 8
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Description
Table 2.
1. x16 organization only available for MCP.
Figure 1.
8/67
NAND01G-
Reference
B2C
NAND01GW3B2C
NAND01GW4B2C
NAND01GR3B2C
NAND01GR4B2C
WP
W
Part number
E
R
Product description
Logic block diagram
Command register
register/counter
Data register
Command
interface
Address
Density
1 Gbit
logic
width
Bus
x16
x8
words
Page
bytes
2048
1024
size
+64
+32
P/E controller,
Block
words
high voltage
bytes
128K
64K+
size
+4K
2K
generator
Memory
pages x
blocks
array
1024
64
Operating
voltage
1.95 V
1.95 V
1.7 to
2.7 to
1.7 to
2.7 to
3.6 V
3.6 V
Random
access
(max)
25 µs
25 µs
25 µs
25 µs
time
1024-Mbit + 32Mbit
Page buffer
Y decoder
memory array
NAND flash
Buffers
I/O
Sequential
access
(min)
45 ns
25 ns
45 ns
25 ns
time
Timings
Program
200 µs
Page
(typ)
time
NAND01G-B2C
Block
erase
(typ)
2 ms
AI14291
VFBGA153
VFBGA63
Package
TSOP48
(1)
(1)