NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 52
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
1. The time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. See
2.
3. During a program/erase enable operation, t
4. t
5. ES = electronic signature.
Figure 21. Command Latch AC waveforms
52/67
Figure
During a program/erase disable Operation, t
t
RLQX
WHWH
I/O
CL
AL
W
E
is valid when frequency is higher than 33 MHz, t
36.
is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
(ALSetup time)
H(E Setup time)
(CL Setup time)
tALLWH
tELWH
tCLHWH
(Data Setup time)
tDVWH
WW
WW
is the delay from WP high to W High.
is the delay from WP Low to W High.
RHQX
Command
is valid for frequency lower than 33 MHz.
tWLWH
tWHDX
(Data Hold time)
(E Hold time)
tWHEH
(CL Hold time)
tWHCLL
(AL Hold time)
tWHALH
Figure
34,
Figure 35
NAND01G-B2C
and
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