NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 57
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
NAND01G-B2C
Figure 29. Page program AC waveforms
RB
CL
I/O
AL
W
R
E
Page Program
setup code
80h
tWLWL
(Write Cycle time)
cycle 1
Add.N
cycle 2
Add.N
Address Input
cycle 3
Add.N
cycle 4
Add.N
tWLWL
N
tWHWH
Data Input
(Program Busy time)
tWHBL
Last
Confirm
tBLBH2
code
tWLWL
10h
Program
DC and AC parameters
Page
Read Status Register
70h
ai13110c
SR0
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