C8051F560-TB Silicon Laboratories Inc, C8051F560-TB Datasheet - Page 41
![BOARD PROTOTYPE W/C8051F560](/photos/9/25/92557/c8051f560-tb_sml.jpg)
C8051F560-TB
Manufacturer Part Number
C8051F560-TB
Description
BOARD PROTOTYPE W/C8051F560
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Datasheet
1.TOOLSTICK560DC.pdf
(302 pages)
Specifications of C8051F560-TB
Contents
Board
Processor To Be Evaluated
C8051F56x
Processor Series
C8051F56x
Interface Type
USB
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
1.8 V to 5.25 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
C8051F55x, C8051F56x, C8051F57x
For Use With
336-1691 - KIT DEVELOPMENT FOR C8051F560
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1694
- Current page: 41 of 302
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Table 5.4. Reset Electrical Characteristics
–40 to +125 °C unless otherwise specified.
Table 5.5. Flash Electrical Characteristics
V
RST Output Low Voltage
RST Input High Voltage
RST Input Low Voltage
RST Input Pullup Current
V
V
Missing Clock Detector Timeout
Reset Time Delay
Minimum RST Low Time to
Generate a System Reset
V
V
Flash Size
Endurance
Retention
Erase Cycle Time
Write Cycle Time
V
DD
DD
DD
DD
DD
DD
1. On the 32 kB Flash devices, 1024 bytes at addresses 0x7C00 to 0x7FFF are reserved.
2. See Table 5.4 for the
= 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified.
RST Threshold (V
RST Threshold (V
Monitor Turn-on Time
Monitor Supply Current
Parameter
Parameter
RST-LOW
RST-HIGH
C8051F550-3, ‘F560-3,
‘F568-9, and ‘F570-1
C8051F554-7, ‘F564-7, and
‘F572-5
125
25 MHz System Clock
25 MHz System Clock
Write/Erase operations
V
RST-HIGH
°
C
)
)
Conditions
VIO = 5 V; IOL = 70 µA
RST = 0.0 V, VIO = 5 V
Time from last system clock
rising edge to reset initiation
V
V
Delay between release of
any reset source and code
execution at location 0x0000
specification.
DD
DD
= 2.1V
= 2.5 V
Conditions
Rev. 1.1
V
RST-HIGH
20 k
Min
10
28
79
C8051F55x/56x/57x
2
0.7 x V
32768
1.65
2.25
16384
Min
200
200
—
—
—
—
—
—
6
150 k
Typ
30
84
—
—
IO
1
1.75
2.30
Typ
340
250
155
49
60
—
—
—
—
1
Max
125
—
—
45
—
0.3 x V
Max
1.80
2.45
600
600
175
100
115
40
—
—
2
Erase/Write
IO
Units
Bytes
Years
ms
µs
V
Units
mV
µA
µA
µs
µs
µs
µs
V
V
41
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