NP8P128A13BSM60E Micron Technology Inc, NP8P128A13BSM60E Datasheet - Page 26

• Manufacturer Part Number: NP8P128A13BSM60E
• Manufacturer: Micron Technology Inc

Specifications of NP8P128A13BSM60E

• Lead Free Status / Rohs Status: Supplier Unconfirmed

8.4
Table 11: Buffered Programming and Bit Alterable Buffer Write Timing Requirements
Table 12: Bit Alterability vs. Flash Bit-Masking
8.5
Datasheet
26
32-word/64-byte Aligned
Programming
Function
Alignment
Bit Alterable Buffer Write
The Bit Alterable Buffer Write command sequence is the same as for Buffer Program.
For command sequence see
The primary difference between the two Buffer commands is when the Write State
Machine starts executing, the data written to the buffer will be directly overwritten into
the PCM memory, unlike Flash Memory, which can only go from “1” to “0” before an
erase of the entire block. See
page
cannot use a “1” in a data mask for no change of the memory cell, as might occur with
floating gate flash.
The advantage of Bit Alterability is no block erase is needed prior to writing a block,
which minimizes system overhead for software management of data, and ultimately
improves latency, determinism, and reduces power consumption because of reduction
of system overhead. Storing of counter variables can easily be handled by using PCM
memory because a “0” can change to a “1” or a “1” can change to a “0”.
Bit Alterable Buffer Program
This mode is sometimes referred to as PreSET Buffered Program.
‘Program on all 1s’ is similar to program mode (“1”s treated as masks; “0”s written to
cells) with the assumption that all the locations in the addressed page have previously
been SET (“1”s). [Performance of Buffer Program on All 1s expected to be better than
buffered program mode because the pre-read step before programming is eliminated.]
The command sequence for Buffered Program on all 1s is the same as Buffered
Program Command (E8h).
26. This overwrite function eliminates Flash Bit Masking, which means software
Command
42h or EAh
42h or EAh
42h or EAh
42h or EAh
40h or E8h
40h or E8h
40h or E8h
40h or E8h
Issued
t
PROG/PB
Programming Time
Section 8.3, “Buffered Program Command” on page
Table 12, “Bit Alterability vs. Flash Bit-Masking” on
Current State
Memory Cell
0
0
1
1
0
0
1
1
Start Address = 1FFF10h; End Address = 1FFF2Fh
Data From
User
Numonyx® Omneo™ P8P Datasheet
0
1
0
1
0
1
0
1
Example
After Programming
Memory Cell
0
0
0
1
0
1
0
1
August 2010
316144-07
25.