NP8P128A13BSM60E Micron Technology Inc, NP8P128A13BSM60E Datasheet - Page 57

• Manufacturer Part Number: NP8P128A13BSM60E
• Manufacturer: Micron Technology Inc

Specifications of NP8P128A13BSM60E

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Numonyx® Omneo™ P8P Datasheet
Figure 18: Reset Operation Waveforms
13.3
August 2010
316144-07
(A) Reset during
(B) Reset during
(C) Reset during
(D) VCC Power-up to
read mode
program or block erase
P1 ≤ P2
program or block erase
P1 ≥ P2
RST# high
Power Supply Decoupling
Flash memory devices require careful power supply de-coupling. Three basic power
supply current considerations are 1) standby current levels, 2) active current levels,
and 3) transient peaks produced when CE# and OE# are asserted and deasserted.
When the device is accessed, many internal conditions change. Circuits within the
device enable charge-pumps, and internal logic states change at high speed. All of
these internal activities produce transient signals. Transient current magnitudes depend
on the device outputs’ capacitive and inductive loading. Two-line control and correct
de-coupling capacitor selection suppress transient voltage peaks.
Flash memory devices draw their power from VCC, VPP, and VCCQ, each power
connection should have a 0.1 µF ceramic capacitor to ground. High-frequency,
inherently low-inductance capacitors should be placed as close as possible to package
leads.
Additionally, for every eight devices used in the system, a 4.7 µF electrolytic capacitor
should be placed between power and ground close to the devices. The bulk capacitor is
meant to overcome voltage droop caused by PCB trace inductance.
RST# [P]
RST# [P]
RST# [P]
V
CC
V
V
V
V
V
V
V
0V
CC
IH
IL
IH
IL
IH
IL
P1
P2
P2
P3
Complete
Abort
Complete
Abort
R5
R5
R5
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