hm5264165f-75 Elpida Memory, Inc., hm5264165f-75 Datasheet - Page 33
hm5264165f-75
Manufacturer Part Number
hm5264165f-75
Description
64m Lvttl Interface Sdram
Manufacturer
Elpida Memory, Inc.
Datasheet
1.HM5264165F-75.pdf
(65 pages)
- Current page: 33 of 65
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Read with auto precharge to Write command interval
1. Different bank: When some banks are in the active state, the second write command (another bank) is
executed. However, DQM, DQMU/DQML must be set High so that the output buffer becomes High-Z before
data input. The internal auto-precharge of one bank starts at the next clock of the second command.
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It
is necessary to separate the two commands with a bank active command.
DQMU/DQML
DQM,
Command
Note: Internal auto-precharge starts at the timing indicated by "
CL = 2
CL = 3
Dout
CLK
Din
BS
HM5264165F/HM5264805F/HM5264405F-75/A60/B60
bank0
Read A
READ A
Data Sheet E0135H10
bank3
Write
in B0
WRIT
in B1
High-Z
in B2
in B3
".
Burst Length = 4
33
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