ATMEGA128-16MN Atmel, ATMEGA128-16MN Datasheet - Page 302
![MCU AVR 128KB FLASH 16MHZ 64QFN](/photos/12/13/121326/313-64-qfn_sml.jpg)
ATMEGA128-16MN
Manufacturer Part Number
ATMEGA128-16MN
Description
MCU AVR 128KB FLASH 16MHZ 64QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA128-16MN
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
EBI/EMI, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
53
Program Memory Size
128KB (64K x 16)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-MLF®, 64-QFN
Processor Series
ATMEGA128x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
4 KB
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATSTK501 - ADAPTER KIT FOR 64PIN AVR MCUATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Data Polling Flash
Data Polling EEPROM
302
ATmega128
3. The SPI Serial Programming instructions will not work if the communication is out of syn-
4. The Flash is programmed one page at a time. The page size is found in
5. The EEPROM array is programmed one byte at a time by supplying the address and data
6. Any memory location can be verified by using the Read instruction which returns the con-
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
When a page is being programmed into the Flash, reading an address location within the page
being programmed will give the value $FF. At the time the device is ready for a new page, the
programmed value will read correctly. This is used to determine when the next page can be writ-
ten. Note that the entire page is written simultaneously and any address within the page can be
used for polling. Data polling of the Flash will not work for the value $FF, so when programming
this value, the user will have to wait for at least t
a chip-erased device contains $FF in all locations, programming of addresses that are meant to
contain $FF, can be skipped. See
When a new byte has been written and is being programmed into EEPROM, reading the
address location being programmed will give the value $FF. At the time the device is ready for a
new byte, the programmed value will read correctly. This is used to determine when the next
byte can be written. This will not work for the value $FF, but the user should have the following in
mind: As a chip-erased device contains $FF in all locations, programming of addresses that are
meant to contain $FF, can be skipped. This does not apply if the EEPROM is re-programmed
without chip-erasing the device. In this case, data polling cannot be used for the value $FF, and
the user will have to wait at least t
for t
WD_EEPROM
chronization. When in sync. the second byte ($53), will echo back when issuing the third
byte of the Programming Enable instruction. Whether the echo is correct or not, all FOUR
bytes of the instruction must be transmitted. If the $53 did not echo back, give RESET a
positive pulse and issue a new Programming Enable command.
page
address and data together with the Load Program Memory Page instruction. To ensure
correct loading of the page, the data low byte must be loaded before data high byte is
applied for given address. The Program Memory Page is stored by loading the Write Pro-
gram Memory Page instruction with the 9MSB of the address. If polling is not used, the
user must wait at least t
Note: If other commands than polling (read) are applied before any write operation (Flash,
EEPROM, Lock bits, Fuses) is completed, may result in incorrect programming.
together with the appropriate Write instruction. An EEPROM memory location is first
automatically erased before new data is written. If polling is not used, the user must wait
at least t
no $FFs in the data file(s) need to be programmed.
tent at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
291. The memory page is loaded one byte at a time by supplying the 7 LSB of the
CC
WD_EEPROM
power off.
value.
before issuing the next byte. (See
WD_FLASH
Table 128
WD_EEPROM
before issuing the next page. (See
for t
before programming the next byte. See
WD_FLASH
WD_FLASH
Table
before programming the next page. As
value
128). In a chip erased device,
Table
128).
Table 124 on
2467V–AVR–02/11
Table 128
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