BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 10

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
Table 8.
For test circuit, see
[1]
[2]
BLF369_4
Product data sheet
Component
C20
C21
C22, C25
C23, C26
C24, C27
C28, C31
C29, C32
C30, C33
L1, L3
L2, L4
L5, L6
R1, R2, R3, R4
R5, R6, R8, R9
R7, R10
R11, R12
T1, T2
T3, T4
American technical ceramics type 100B or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35 m.
List of components
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
ceramic capacitor
stripline
air coil
stripline
resistor
resistor
potentiometer
resistor
semi rigid coax
semi rigid coax
14,
Figure 15
…continued
and
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
Figure
Rev. 04 — 19 February 2009
16.
Value
100 pF
20 pF
100 pF
15 nF
10 F
100 pF
220 pF
15 nF
-
-
-
0.25 W; 4
0.25 W; 10
10 k
0.25 W; 1
25 ; 68 mm
25 ; 60 mm
Multi-use VHF power LDMOS transistor
[1]
[1]
[1]
[1]
[2]
[2]
Remarks
(W
4 windings; D = 8 mm; d = 1 mm
(W
EZ90-25-TP
EZ90-25-TP
L) 12 mm
L) 14 mm
15 mm
15 mm
© NXP B.V. 2009. All rights reserved.
BLF369
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