BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 15

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF369_4
Product data sheet
Document ID
BLF369_4
Modifications:
BLF369_3
BLF369_2
BLF369_1
Revision history
Table 9.
Acronym
CW
DC
GSM
HF
LDMOS
LDMOST
PEP
RF
TTF
UHF
VHF
VSWR
Release date
20090219
20080129
20061208
20060413
•
Data sheet status updated from 'Preliminary data sheet' to 'Product data sheet'
Abbreviations
Description
Continuous Wave
Direct Current
Global System for Mobile communications
High Frequency
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Very High Frequency
Voltage Standing-Wave Ratio
Data sheet status
Product data sheet
Preliminary data sheet
Objective data sheet
Objective data sheet
Rev. 04 — 19 February 2009
Change notice
-
-
-
-
Multi-use VHF power LDMOS transistor
Supersedes
BLF369_3
BLF369_2
BLF369_1
-
© NXP B.V. 2009. All rights reserved.
BLF369
15 of 17