BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 7

RF MOSFET Small Signal RF LDMOS 65V 100A

BLF369,112

Manufacturer Part Number
BLF369,112
Description
RF MOSFET Small Signal RF LDMOS 65V 100A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF369,112

Configuration
Dual Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Resistance Drain-source Rds (on)
0.04 Ohm (Typ) @ 14.5 V
Transistor Polarity
N-Channel
Package / Case
LDMOST
Application
HF/VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
500W
Power Gain (typ)@vds
18@32V/19@32V/19@32VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15S
Drain Source Resistance (max)
40(Typ)@14.5Vmohm
Input Capacitance (typ)@vds
400@32VpF
Output Capacitance (typ)@vds
230@32VpF
Reverse Capacitance (typ)
15@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059725112 BLF369
NXP Semiconductors
BLF369_4
Product data sheet
Fig 8.
(dB)
G
p
21
19
17
15
0
f = 225 MHz; V
Pulsed power gain as function of load power;
typical values
= 10 %.
7.4 Maximum heatsink temperature
200
DS
The heatsink temperature is defined 1 mm below the surface of the heatsink at the center
of the flange.
The maximum allowable heatsink temperature is given in the following graphs at several
pulsed conditions as well as for CW.
= 32 V; I
400
Dq
= 2
600
1 A; t
P
001aah500
L
(W)
p
= 100 s;
Rev. 04 — 19 February 2009
800
Fig 9.
(%)
D
70
50
30
10
0
f = 225 MHz; V
Pulsed drain efficiency as function of
load power; typical values
= 10 %.
Multi-use VHF power LDMOS transistor
200
DS
= 32 V; I
400
Dq
= 2
600
1 A; t
© NXP B.V. 2009. All rights reserved.
P
001aah501
BLF369
L
(W)
p
= 100 s;
800
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