BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 13

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

Fig 16. Component layout for class-AB 225 MHz test circuit
C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4.
B2
C28
C31
C29
C32
+ V
+ V
R11
R12
G1(test)
G2(test)
C30
C33
C24
C27
+
+
T3
T4
C20
R10
R7
C23
L6
C26
L5
C21
R5
R8
C22
C25
R6
R9
BLF 369
C4
C7
C5
C8
L2
L4
L1
C1
L3
+ V
+ V
D1(test)
D2(test)
T1
T2
R1
R3
C6
R2
C10
R4
C13
C9
C11
C14
C12
C15
C2
C3
B1
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