BLF369,112 NXP Semiconductors, BLF369,112 Datasheet - Page 3

• Manufacturer Part Number: BLF369,112
• Description: RF MOSFET Small Signal RF LDMOS 65V 100A
• Manufacturer: NXP Semiconductors

Specifications of BLF369,112

• Configuration: Dual Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Resistance Drain-source Rds (on): 0.04 Ohm (Typ) @ 14.5 V
• Transistor Polarity: N-Channel
• Package / Case: LDMOST
• Application: HF/VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 500W
• Power Gain (typ)@vds: 18@32V/19@32V/19@32VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15S
• Drain Source Resistance (max): 40(Typ)@14.5Vmohm
• Input Capacitance (typ)@vds: 400@32VpF
• Output Capacitance (typ)@vds: 230@32VpF
• Reverse Capacitance (typ): 15@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/Pulsed RF Class-AB
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059725112 BLF369

NXP Semiconductors
5. Thermal characteristics
BLF369_4
Product data sheet
Fig 1.
Z
(K/W)
th(j-h)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
0.4
0.3
0.2
0.1
0
10
Transient thermal impedance from junction to heatsink as function of pulse duration
7
= 1 %
= 2 %
= 5 %
= 10 %
= 20 %
= 50 %
= 100 % (DC)
(7)
(6)
(5)
(4)
10
6
(3)
(2)
(1)
Table 5.
[1]
[2]
[3]
[4]
Symbol
R
R
Z
th(j-h)
th(j-case)
th(j-h)
T
R
R
See
j
th(j-case)
th(j-h)
is the junction temperature.
Figure
10
is dependent on the applied thermal compound and clamping/mounting of the device.
Thermal characteristics
5
and R
1.
Parameter
thermal resistance from
junction to case
thermal resistance from
junction to heatsink
transient thermal impedance
from junction to heatsink
th(j-h)
10
are measured under RF conditions.
Rev. 04 — 19 February 2009
4
10
3
10
Conditions
T
T
T
j
j
j
2
= 200 C
= 200 C
= 200 C
Multi-use VHF power LDMOS transistor
t
t
t
t
t
p
p
p
p
p
= 100 s; = 10 %
= 1 ms; = 10 %
= 2 ms; = 10 %
= 3 ms; = 10 %
= 1 ms; = 20 %
10
1
1
[1][2]
[1][2][3]
[4]
[4]
[4]
[4]
[4]
© NXP B.V. 2009. All rights reserved.
t
p
001aah494
BLF369
(s)
Typ
0.26
0.35
0.063 K/W
0.117 K/W
0.133 K/W
0.142 K/W
0.140 K/W
10
3 of 17
Unit
K/W
K/W